S. Ben Chiah: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Multi-trap energy states in GaN HEMTs: Characterization and modeling

Syamal, Binit, Zhou, Xing, Ben Chiah, Siau

Year:

2017

Language:

english

File:

PDF, 314 KB

english, 2017

2

Implicit Analytical Surface/Interface Potential Solutions for Modeling Strained-Si MOSFETs

Karthik Chandrasekaran, Xing Zhou, Siau Ben Chiah, Guan Huei See, Subhash C. Rustagi

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 827 KB

english, 2006

3

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Monolithic III-V/CMOS Co-integrated Technology, Scalable Compact Modeling, and Hybrid Circuit Design

Zhou, Xing, Chiah, Siau Ben

Year:

2018

Language:

english

File:

PDF, 1.30 MB

english, 2018

4

Unification of MOS compact models with the unified regional modeling approach

Xing Zhou, Guojun Zhu, Guan Huei See, Karthik Chandrasekaran, Siau Ben Chiah, Khee Yong Lim

Journal:

Journal of Computational Electronics

Year:

2011

Language:

english

File:

PDF, 946 KB

english, 2011

5

A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs

Guan Huei See, Xing Zhou, Chandrasekaran, K., Siau Ben Chiah, Zhaomin Zhu, Chengqing Wei, Shihuan Lin, Guojun Zhu, Guan Hui Lim

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 936 KB

english, 2008

6

Compact Zero-Temperature Coefficient Modeling Approach for MOSFETs Based on Unified Regional Modeling of Surface Potential

Chiah, Siau Ben, Zhou, Xing, Yuan, Li

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 735 KB

english, 2013

7

[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Extraction of physical parameters of strainedsilicon MOSFETs from C-V measurement

Chandrasekaran, K., Xing Zhou,, Siau Ben Chiah,, Wangzuo Shangguan,, Guan Huei See,, Bera, L.K., Balasubramanian, N., Rustagi, S.C.

Year:

2005

Language:

english

File:

PDF, 236 KB

english, 2005

8

Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

Chiah, Siau Ben, Zhou, Xing

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.02 MB

english, 2014

9

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

Zhou, Xing, Zhang, Junbin, Syamal, Binit, Ben Chiah, Siau, Zhou, Hongtao, Yuan, Li

Year:

2012

Language:

english

File:

PDF, 358 KB

english, 2012

10

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits

Xing Zhou,, Siau Ben Chiah,, Khee Yong Lim,, Yuwen Wang,, Xing Yu,, Chwa, S., See, A., Lap Chan,

Year:

2001

Language:

english

File:

PDF, 432 KB

english, 2001

11

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Compact modeling of III–V/Si FETs

Zhou, Xing, Chiah, Siau Ben, Syamal, Binit, Ajaykumar, Arjun, Liu, Xu, Zhou, Hongtao

Year:

2014

Language:

english

File:

PDF, 1.15 MB

english, 2014

12

[IEEE ESSDERC 2014 - 44th European Solid State Device Research Conference - Venice Lido, Italy (2014.9.22-2014.9.26)] 2014 44th European Solid State Device Research Conference (ESSDERC) - Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well

Ajaykumar, Arjun, Xing, Zhou, Syamal, Binit, Ben Chiah, Siau

Year:

2014

Language:

english

File:

PDF, 2.54 MB

english, 2014

13

Compact electrical/optical model for InGaN/GaN quantum-well based LEDs

A. Ajaykumar, X. Zhou, B. Syamal, S. Ben Chiah, L. Zhang

Year:

2015

Language:

english

File:

PDF, 216 KB

english, 2015

14

[IEEE 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Singapore, Singapore (2015.6.1-2015.6.4)] 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - GaN HEMT compact model for circuit simulation

Syamal, Binit, Ben Chiah, Siau, Zhou, Xing, Ajaykumar, Arjun, Anand, M. J., Ng, Geok Ing, Arulkumaran, S.

Year:

2015

Language:

english

File:

PDF, 175 KB

english, 2015

15

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Xsim: unified regional approach to compact modeling for next generation CMOS

Xing Zhou,, Siau Ben Chiah,, Chandrasekaran, K., Wangzuo Shangguan,, Guan Huei See,

Year:

2004

Language:

english

File:

PDF, 1.71 MB

english, 2004

16

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Jesudas, Anand M., Arulkumaran, Subramaniam, Ng, Geok Ing

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.96 MB

english, 2016

17

Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion to Quasi-Ballistic Transport

Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben, Syamal, Binit

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 392 KB

english, 2016

18

[IEEE 2016 International Symposium on Integrated Circuits (ISIC) - Singapore (2016.12.12-2016.12.14)] 2016 International Symposium on Integrated Circuits (ISIC) - Effect of metal work function on the DC characteristics of an asymmetric MOSFET with Schottky-based source

Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben

Year:

2016

Language:

english

File:

PDF, 441 KB

english, 2016

19

[IEEE 2016 International Symposium on Integrated Circuits (ISIC) - Singapore (2016.12.12-2016.12.14)] 2016 International Symposium on Integrated Circuits (ISIC) - An on-chip integrated III–V / CMOS 125MSps 6-bit SAR ADC

Sharma, Sunny, Chiah, Siau Ben, Xing Zhou,, Boon, Chirn Chye

Year:

2016

Language:

english

File:

PDF, 871 KB

english, 2016

20

Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben, Syamal, Binit

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.09 MB

english, 2017

21

[IEEE 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Lausanne, Switzerland (2017.3.27-2017.3.31)] Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017 - Automatic place-and-route of emerging LED-driven wires within a monolithically-integrated CMOS−III-V process

Krishna, Tushar, Balachandran, Arya, Ben Chiah, Siau, Zhang, Li, Wang, Bing, Wang, Cong, Kian, Kenneth Lee Eng, Michel, Jurgen, Peh, Li-Shiuan

Year:

2017

Language:

english

File:

PDF, 975 KB

english, 2017

22

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 213 KB

english, 2017

23

[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Unified HEMT/CMOS compact models for future heterogeneous III–V/Si co-integrated technology

Zhou, Xing, Chiah, Siau Ben, Ajaykumar, Arjun, Syamal, Binit, Zhou, Hongtao, Liu, Xu

Year:

2016

Language:

english

File:

PDF, 596 KB

english, 2016

24

In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Ben Chiah, Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene

Journal:

Year:

2018

Language:

english

File:

PDF, 1.81 MB

english, 2018

25

[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Reduction of Current Collapse in GaN (MIS)-HEMTs Using Dual Material Gate

Syamal, Binit, Chiah, Siau Ben, Zhou, Xing

Year:

2019

File:

PDF, 1.52 MB

2019

26

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

Khai, Loke Wan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon, Yue, Wang, Kwang Hong, Lee, Zhihong, Liu, Hanlin, Xie, Siau Ben, Chiah, Eng Kian, Kenneth Lee, Xing, Zhou, Tan, Chuan Seng

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 418 KB

2020

27

[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - Monolithic Co-integration of III-V Materials into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits

Zhou, Xing, Chiah, Siau Ben, Syamal, Binit, Lee, Kenneth

Year:

2019

File:

PDF, 6.53 MB

2019